we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications.all operating parameters must be validated for each customer application by the c ustomer. smd-led 16.11.2007 rev. 05 radiation infrared absolute maximum ratings at t amb = 25c, unless otherwise specified symbol value unit i f 100 ma i fm 200 ma i sfm 2000 ma p 180 mw t amb -40 to +85 c t stg -40 to +90 c electrical and optical characteristics at t amb = 25c, unless otherwise specified parameter test conditions symbol min typ max unit forward voltage i f = 100 ma v f 1.6 1.85 v reverse voltage i f = 100 a v r 5 v radiant power i f = 100 ma e 25 35 mw radiant intensity i f = 100 ma e 10 13 mw/sr peak wavelength i f = 100 ma p 870 880 900 nm spectral bandwidth at 50% i f = 100 ma ? 0.5 40 nm viewing angle i f = 100 ma ? 135 deg. switching time i f = 100 ma t r , t f 25 ns note: all measurements carried out with epigap equipment description t p 10 s test onditions applications t p 50 s, t p /t 0.5 peak forward current ELS-880-995 smd algaas/algaas topled type technology case high-power, high speed led in topled ? plcc-2 package, compact design allows for easy circuit board mounting and assembling of arrays optical communications, remote control, light barriers, measurement applications and security systems, automation parameter surge forward current storage temperature range power dissipation operating temperature range dc forward current 2,2 0,1 2,8 0,2 ? 2,4 0,2 3,1 0,2 1,9 0,2 3,5 0,2 0,8 0,15 0,5 0,2 1 2 2 cathode anode anode elc-67 epigap optoelektronik gmbh, d-12555 berlin, k?penicker str.325 b, haus 201 tel.: +49-30-6576 2543, fax : +49-30-6576 2545 1 of 1
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